Toshiba
Toshiba Semiconductor
TRIPLE DIFFUSED TYPE (DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING, AMPLIFIER APPLICATIONS)
Toshiba Semiconductor
Toshiba Semiconductor
Toshiba Semiconductor
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-416
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-416
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-416
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-416
Toshiba Semiconductor
Toshiba Semiconductor
From datasheet system
Hitachi Semiconductor
Panasonic Semiconductor
Silicon epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
Panasonic Semiconductor
Silicon epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
2SC5473 (Tentative) - NPN Transistor
Panasonic Semiconductor
Silicon epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
2SC5474 (Tentative) - Silicon NPN epitaxial planer type
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1.5A I(C) | TO-210AB
BJT
BJT
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 50MA I(C) | SOT-343R
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 50MA I(C) | SOT-343R
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | SOT-343R
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | SOT-343R
NEC
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
NEC[NEC]
SILICON TRANSISTOR NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
Discrete
NEC[NEC]
SILICON TRANSISTOR NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
Discrete
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-210AB
Rohm