TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 3A I(C) | FP
Elektrische Eigenschaften Electrical properties
IGBT Module
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 10A I(D) | TO-247
12,500 20,000 Rectifier Stacks Forward Current Recovery Time
VMI[Voltage Multipliers Inc.]
12,500 20,000 Rectifier Stacks Forward Current 3000 Recovery Time
IGBT Module
IGBT Module