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KM416V1204C-45

SAMSUNG[Samsung semiconductor]

16Bit CMOS Dynamic with Extended Data

KM416V1204C-5

SAMSUNG[Samsung semiconductor]

16Bit CMOS Dynamic with Extended Data

KM416V1204C-6

SAMSUNG[Samsung semiconductor]

16Bit CMOS Dynamic with Extended Data

KM416V1204C-L45

SAMSUNG[Samsung semiconductor]

16Bit CMOS Dynamic with Extended Data

KM416V1204C-L5

SAMSUNG[Samsung semiconductor]

16Bit CMOS Dynamic with Extended Data

KM416V1204C-L6

SAMSUNG[Samsung semiconductor]

16Bit CMOS Dynamic with Extended Data

KM416V1204CJ-45

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms

KM416V1204CJ-5

Samsung

3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns

KM416V1204CJ-50

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms

KM416V1204CJ-6

Samsung

3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

KM416V1204CJ-60

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms

KM416V1204CJ-L5

Samsung

3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns

KM416V1204CJ-L6

Samsung

3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

KM416V1204CJL-45

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh

KM416V1204CJL-50

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh

KM416V1204CJL-60

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh

KM416V1204CT-45

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms

KM416V1204CT-5

Samsung

3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns

KM416V1204CT-50

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms

KM416V1204CT-6

Samsung

3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

KM416V1204CT-60

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms

KM416V1204CT-L5

Samsung

3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns

KM416V1204CT-L6

Samsung

3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

KM416V1204CTL-50

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh

KM416V1204CTL-60

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh

KM416V12CJ-L45

SAMSUNG[Samsung semiconductor]

16Bit CMOS Dynamic with Extended Data

KM416V12CJ-L5

SAMSUNG[Samsung semiconductor]

16Bit CMOS Dynamic with Extended Data

KM416V12CJ-L6

SAMSUNG[Samsung semiconductor]

16Bit CMOS Dynamic with Extended Data

KM416V12CT-L45

SAMSUNG[Samsung semiconductor]

16Bit CMOS Dynamic with Extended Data

KM416V12CT-L5

SAMSUNG[Samsung semiconductor]

16Bit CMOS Dynamic with Extended Data

KM416V12CT-L6

SAMSUNG[Samsung semiconductor]

16Bit CMOS Dynamic with Extended Data

KM416V254D

256K 16Bit CMOS Dynamic with Extended Data

KM416V254DJ-5

Samsung

256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period

KM416V254DJ-6

Samsung

256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period

KM416V254DJ-7

Samsung

256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period

KM416V254DJL-5

Samsung

256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh

KM416V254DJL-6

Samsung

256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh

KM416V254DJL-7

Samsung

256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh

KM416V254DL

Samsung semiconductor

256K x 16Bit CMOS Dynamic RAM with Extended Data Out(256K x 16??CMOS ????AM??????????????

KM416V254DT-5

Samsung

256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period

KM416V254DT-6

Samsung

256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period

KM416V254DT-7

Samsung

256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period

KM416V254DTL-5

Samsung

256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh

KM416V254DTL-6

Samsung

256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh

KM416V254DTL-7

Samsung

256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh

KM416V256D

256K 16Bit CMOS Dynamic with Fast Page Mode

KM416V256DJ-5

Samsung

256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V

KM416V256DJ-6

Samsung

256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V

KM416V256DJ-7

Samsung

256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V

KM416V256DLJ-5

Samsung

256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability

KM416V256DLJ-6

Samsung

256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability

KM416V256DLJ-7

Samsung

256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability

KM416V256DLT-5

Samsung

256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability

KM416V256DLT-6

Samsung

256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability

KM416V256DLT-7

Samsung

256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability

KM416V256DT-5

Samsung

256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V

KM416V256DT-6

Samsung

256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V

KM416V256DT-7

Samsung

256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V

KM416V4000B

SAMSUNG[Samsung semiconductor]

16bit CMOS Dynamic with Fast Page Mode

KM416V4000BS-45

Samsung

4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns

KM416V4000BS-5

Samsung

4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns

KM416V4000BS-6

Samsung

4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns

KM416V4000BS-L45

Samsung

4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power

KM416V4000BS-L5

Samsung

4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power

KM416V4000BS-L6

Samsung

4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power

KM416V4000C

SAMSUNG[Samsung semiconductor]

16bit CMOS Dynamic with Fast Page Mode

KM416V4000CS-45

Samsung

4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns

KM416V4000CS-5

Samsung

4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns

KM416V4000CS-6

Samsung

4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns

KM416V4000CS-L45

Samsung

4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power

KM416V4000CS-L5

Samsung

4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power

KM416V4000CS-L6

Samsung

4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power

KM416V4004B

SAMSUNG[Samsung semiconductor]

16bit CMOS Dynamic with Extended Data

KM416V4004BS-5

Samsung

4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns

KM416V4004BS-6

Samsung

4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns

KM416V4004BSL-5

Samsung

4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power

KM416V4004BSL-6

Samsung

4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power

KM416V4004C

SAMSUNG[Samsung semiconductor]

16bit CMOS Dynamic with Extended Data

KM416V4004CS-45

Samsung

4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns

KM416V4004CS-50

Samsung

4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns