KM 开头的电子元件资料列表

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KM416C1004BT-L6

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

KM416C1004BT-L7

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns

KM416C1004C

SAMSUNG[Samsung semiconductor]

16Bit CMOS Dynamic with Extended Data

KM416C1004C-45

Samsung semiconductor

16Bit CMOS Dynamic with Extended Data

KM416C1004C-5

Samsung semiconductor

KM416C1004C-6

Samsung semiconductor

16Bit CMOS Dynamic with Extended Data

KM416C1004C-L45

Samsung semiconductor

KM416C1004C-L5

Samsung semiconductor

KM416C1004C-L6

Samsung semiconductor

16Bit CMOS Dynamic with Extended Data

KM416C1004CJ-45

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms

KM416C1004CJ-5

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms

KM416C1004CJ-6

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms

KM416C1004CJ-L45

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns

KM416C1004CJ-L5

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns

KM416C1004CJ-L6

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

KM416C1004CJL-45

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh

KM416C1004CJL-5

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh

KM416C1004CJL-6

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh

KM416C1004CT-45

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms

KM416C1004CT-5

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms

KM416C1004CT-6

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

KM416C1004CT-L45

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns

KM416C1004CT-L5

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns

KM416C1004CT-L6

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

KM416C1004CTL-5

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh

KM416C1004CTL-6

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh

KM416C10CJ-L45

Samsung semiconductor

16Bit CMOS Dynamic with Extended Data

KM416C10CJ-L5

Samsung semiconductor

16Bit CMOS Dynamic with Extended Data

KM416C10CJ-L6

Samsung semiconductor

16Bit CMOS Dynamic with Extended Data

KM416C10CT-L45

Samsung semiconductor

16Bit CMOS Dynamic with Extended Data

KM416C10CT-L5

Samsung semiconductor

16Bit CMOS Dynamic with Extended Data

KM416C10CT-L6

Samsung semiconductor

16Bit CMOS Dynamic with Extended Data

KM416C1200B

16Bit CMOS Dynamic with Fast Page Mode

KM416C1200BJ-5

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns

KM416C1200BJ-6

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns

KM416C1200BJ-7

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns

KM416C1200BJL-5

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns

KM416C1200BJL-6

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns

KM416C1200BJL-7

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns

KM416C1200BT-5

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns

KM416C1200BT-6

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns

KM416C1200BT-7

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns

KM416C1200BTL-5

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns

KM416C1200BTL-6

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns

KM416C1200BTL-7

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns

KM416C1200C

16Bit CMOS Dynamic with Fast Page Mode

KM416C1200CJ-5

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns

KM416C1200CJ-6

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns

KM416C1200CJL-5

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns

KM416C1200CJL-6

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns

KM416C1200CT-5

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns

KM416C1200CT-6

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns

KM416C1200CTL-5

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns

KM416C1200CTL-6

Samsung

1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns

KM416C1204BJ-45

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns

KM416C1204BJ-5

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns

KM416C1204BJ-6

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

KM416C1204BJ-7

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns

KM416C1204BJ-L45

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns

KM416C1204BJ-L5

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns

KM416C1204BJ-L6

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

KM416C1204BJ-L7

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns

KM416C1204BT-45

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns

KM416C1204BT-5

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns

KM416C1204BT-6

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

KM416C1204BT-7

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns

KM416C1204BT-L45

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns

KM416C1204BT-L5

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns

KM416C1204BT-L6

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

KM416C1204BT-L7

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns

KM416C1204C

16BIT CMOS DYNAMIC WITH EXTENDED DATA

KM416C1204C-45

Samsung semiconductor

16Bit CMOS Dynamic with Extended Data

KM416C1204C-5

Samsung semiconductor

KM416C1204C-6

Samsung semiconductor

KM416C1204C-L45

Samsung semiconductor

KM416C1204C-L5

Samsung semiconductor

KM416C1204C-L6

Samsung semiconductor

KM416C1204CJ-45

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms

KM416C1204CJ-50

Samsung

1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms

KM416C1204CJ-6

Samsung

5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns