Samsung semiconductor
Samsung semiconductor
Samsung semiconductor
Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms
Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh
Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms
Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh
Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
16Bit CMOS Dynamic with Fast Page Mode
16Bit CMOS Dynamic with Fast Page Mode
16BIT CMOS DYNAMIC WITH EXTENDED DATA
Samsung semiconductor
Samsung semiconductor
Samsung semiconductor
Samsung semiconductor
Samsung semiconductor
Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms
Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms